A Simple High-Performance Low-Loss Current-Source Driver for SiC Bipolar Transistors
2012 (English)In: 7th International Power Electronics and Motion Control Conference (IPEMC), 2012, IEEE conference proceedings, 2012, 222-228 p.Conference paper (Refereed)
The paper proposes a novel topology of a simple base drive unit for silicon carbide bipolar junction transistors (BJTs) based on the current-source principle. Energy stored in a small, air-cored inductor is employed to generate a current peak forcing the BJT to turn-on (10–20ns) very rapidly. The driver enables very high switching performance and very low switching losses of the driven BJT. Both the current source and the unit delivering the steady-state current to the base are supplied from the same low-voltage source in order to limit power consumption. Operation principles as well as selected design issues are discussed in the paper and illustrated by experiments. The 1200V/6A SiC BJT driven by the proposed circuit shows a very fast switching speed.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2012. 222-228 p.
Silicon carbide, base drive unit, bipolar transistor, current source
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-104816DOI: 10.1109/IPEMC.2012.6258834ScopusID: 2-s2.0-84866785066ISBN: 978-1-4577-2085-7OAI: oai:DiVA.org:kth-104816DiVA: diva2:567481
ECCE Asia 2012 - 7th International Power Electronics and Motion Control Conference, Harbin, China, 2-5 June 2012
Qc 201211162012-11-162012-11-132012-11-16Bibliographically approved