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Photoluminescense and AFM characterization of silicon nanocrystals prepared by low-temperature plasma enhanced chemical vapour deposition and annealing
KTH, School of Engineering Sciences (SCI), Theoretical Physics.
KTH, School of Engineering Sciences (SCI), Theoretical Physics.
2012 (English)Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

When studying quantum dots one of the most important properties

is the size of the band gap, and thus also their physical dimensions.

We investigated these properties for silicon quantum dots created

by means of plasma-enhanced chemical vapour deposition and annealing.

To determine the band gap size we measured photoluminescence

for ten dierent samples and to determine the physical

dimensions we used an atomic force microscope. The photoluminescence

measurements indicated that the intensity of the emitted

photons varied across the samples, but did not indicate any shift in

peak wavelength between samples nor any time-dependence of the

luminescence. The peak wavelength was in the order of 600 to 620

nm, corresponding to a band gap of 2.0 to 2.1 eV and a physical size

of approximately 3 nm. The AFM scans revealed densely packed

quantum dots, where few single objects could be distinguished. In

order to be able to perform a better statistical analysis, eorts would

have to be taken to separate the quantum dots.

Place, publisher, year, edition, pages
2012. , 20 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-104057OAI: oai:DiVA.org:kth-104057DiVA: diva2:562861
Uppsok
Technology
Supervisors
Available from: 2012-11-09 Created: 2012-10-26 Last updated: 2013-02-25Bibliographically approved

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CiteExportLink to record
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