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Simulation, Measurement and Analysis of the Response of Electron- and Position Sensitive Detector
Mid Sweden University, Faculty of Science, Technology and Media, Department of Information Technology and Media.
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Different methods exist in relation to probing and investigating thephysical and structural composition of materials especially detectors whoseusage have become an integral part of radiation detection. The use of thescanning electron microscopy is just one of such exploratory methods. Thistechnique uses a focused beam of high-energy electrons to generate a varietyof signals at the surface of the device under investigationThis thesis presents the results derived from signals from electron beamsampleinteractions, revealing information about the different cleanroomfabricated electron detectors used. This information includes the detector’sexternal morphology and texture, surface recombination, fixed oxide chargeand the behavioral characteristic in the form of its position detection accuracyand linearity.An electron detector with a high ionization factor and which has a 10nmSilicon Oxide passivating layer was fabricated. Results from using the scanningelectron microscopy showed that its maximum responsivity wasapproximately 0.25 A/W from a possible 0.27 A/W. In conjunction withsimulations, results also showed the significance of the effect of the minoritycarrier's surface recombination velocity on the responsivity of the detectors.In addition, measurements were conducted to ascertain the performancevariance of these electron detectors with respect to their surfacerecombination velocity and fixed oxide charge when the doping profile isaltered.By incorporating special features on a fabricated duo-lateral positionsensitive detector (PSD), a position sensing resolution of the PSD using theelectron microscopic method was also evaluated. The evaluation showed avery high linearity over two-dimensions for 77% of the PSD’s active area.The results in this thesis offer a significant improvement in electrondetectors for applications such as gas chromatography detection of traceamounts of chemical compounds in a sample as well as applications involvingposition sensitive detection.

Place, publisher, year, edition, pages
Sundsvall: Mid Sweden University , 2012. , p. 65
Series
Mid Sweden University licentiate thesis, ISSN 1652-8948 ; 91
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:miun:diva-17239Local ID: STCISBN: 978-91-87103-38-4 (print)OAI: oai:DiVA.org:miun-17239DiVA: diva2:562577
Supervisors
Available from: 2012-10-25 Created: 2012-10-25 Last updated: 2016-10-20Bibliographically approved
List of papers
1. High resolution, low energy electron detector
Open this publication in new window or tab >>High resolution, low energy electron detector
2011 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 6, no 1, p. Art. no. P01001-Article in journal (Refereed) Published
Abstract [en]

Electron detection at low energy range for scanning electron microscope (SEM), electron capture detector and electron probe micro-analysis (EPMA) applications, require detectors with high sensitivity and accuracy for low energy range. Such detectors must therefore have a thin entrance window and low recombination at the Si-SiO2 interface. An electron detector with 100 photons to electron-hole pair production rate having a 10 nm SiO2 passivating layer reveals a responsivity of approximately 0.25 A/W when irradiated. Simulations results showing the responsivity of electron interaction between detectors of varied interface fixed oxide charge density Qf show that there is an appreciable difference with the responsivity of a p +n detector and that of an n+p. The simulation results also show the significance of the effect of the minority carriers transport velocity Sn,p on the responsivity of the detector. © 2011 IOP Publishing Ltd and SISSA.

Keyword
Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc), Interaction of radiation with matter, Solid state detectors
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-14219 (URN)10.1088/1748-0221/6/01/P01001 (DOI)000291345600001 ()2-s2.0-79952836489 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Available from: 2011-07-19 Created: 2011-07-19 Last updated: 2017-12-08Bibliographically approved
2. Surface State Effects on N+P Doped Electron Detector
Open this publication in new window or tab >>Surface State Effects on N+P Doped Electron Detector
2011 (English)In: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 6, no 12, p. Art. no. C12019-Article in journal (Refereed) Published
Abstract [en]

Surface states and interface recombination velocity that exist between detector interfaces have always been known to affect the performance of a detector. This article describes how the detector performance varies when the doping profile is altered. When irradiated with electrons, the results show that while changes in the doping profile have an effect of the detector responsivity with respect to the interface recombination velocity

Vs, there is no visible effect with respect tofixed oxide charge

Qfotherwise known as interface fixed charge density.

Keyword
Interaction of radiation with matter; Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission
National Category
Nano Technology
Identifiers
urn:nbn:se:miun:diva-15251 (URN)10.1088/1748-0221/6/12/C12019 (DOI)000299536600019 ()2-s2.0-84855426427 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Conference
13th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS, 3–7 JULY 2011, ETH ZURICH, SWITZERLAND
Note

13th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS, 3–7 JULY 2011, ETH ZURICH, SWITZERLAND

Available from: 2011-12-14 Created: 2011-12-14 Last updated: 2017-12-08Bibliographically approved
3. A Different Approach of Determining the Responsivity of n+p Detectors Using Scanning Electron Microscopy
Open this publication in new window or tab >>A Different Approach of Determining the Responsivity of n+p Detectors Using Scanning Electron Microscopy
2012 (English)In: Journal of semiconductors, ISSN 1674-4926, Vol. 33, no 7, p. 074002-Article in journal (Refereed) Published
Abstract [en]

This paper explores an alternative to the standard method of studying the responsivities (the input—output gain) and other behaviours of detectors at low electron energy. The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.

Keyword
Condensed matter: electrical, magnetic and optical, Electronics and devices, Semiconductors, Surfaces, interfaces and thin films, Optics, quantum optics and lasers
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-17237 (URN)10.1088/1674-4926/33/7/074002 (DOI)2-s2.0-84864227940 (Scopus ID)STC (Local ID)STC (Archive number)STC (OAI)
Available from: 2012-10-25 Created: 2012-10-25 Last updated: 2017-06-30Bibliographically approved
4. An n+p Duo-lateral Position Sensitivity Detector with High Sensitivity to Low Energetic Electrons
Open this publication in new window or tab >>An n+p Duo-lateral Position Sensitivity Detector with High Sensitivity to Low Energetic Electrons
(English)Manuscript (preprint) (Other academic)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:miun:diva-17238 (URN)
Available from: 2012-10-25 Created: 2012-10-25 Last updated: 2016-10-05Bibliographically approved

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