Exciton localization in doped Si nanocrystals from single dot spectroscopy studies
2012 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, no 7, 075311- p.Article in journal (Refereed) Published
The results of low-temperature photoluminescence characterization of single silicon nanocrystals prepared from highly doped silicon-on-insulatorwafers are presented. The effect of B, P, As, and Sb impurities on ensemble as well as individual emission spectra are determined by comparison with the line shapes of undoped nanocrystals. From the statistical analysis of the luminescence spectra, the donor ionization energies for nanocrystals emitting in the range of 1.5-2.0 eV are estimated to be 140-200 meV, while the exciton-impurity binding energy for As- and Sb-doped nanocrystals is found to be about 40-45 meV.
Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 86, no 7, 075311- p.
Quantum Dots, Silicon Nanocrystals, Photoluminescence, Recombination
IdentifiersURN: urn:nbn:se:kth:diva-102624DOI: 10.1103/PhysRevB.86.075311ISI: 000307720300003ScopusID: 2-s2.0-84865693382OAI: oai:DiVA.org:kth-102624DiVA: diva2:555816
FunderSwedish Research CouncilEU, FP7, Seventh Framework Programme, 245977
QC 201209212012-10-052012-09-212012-10-05Bibliographically approved