Interaction-induced enhancement of g-factor in graphene
2012 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 86, no 15, 155440- p.Article in journal (Refereed) Published
We study the effect of electron interaction on the spin-splitting and the g-factor in graphene in perpendicular magnetic field using the Hartree and Hubbard approximations within the Thomas-Fermi model. We found that the g-factor is enhanced in comparison to its free electron value g = 2 and oscillates as a function of the filling factor ѵ in the range 2 ≤ g∗ < 4 reaching maxima at even ѵ and minima at odd ѵ. We outline the role of charged impurities in the substrate, which are shown to suppress the oscillations of the g∗-factor. This effect becomes especially pronounced with the increase of the impurity concentration, when the effective g-factor becomes independent of the filling factor reaching a value of g∗ ≈ 2.3. A relation to the recent experiment is discussed.
Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 86, no 15, 155440- p.
IdentifiersURN: urn:nbn:se:liu:diva-80620DOI: 10.1103/PhysRevB.86.155440ISI: 000310130800005OAI: oai:DiVA.org:liu-80620DiVA: diva2:547421