Very high aspect ratio through-silicon vias (TSVs) fabricated using automated magnetic assembly of nickel wires
2012 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 22, no 10, 105001- p.Article in journal (Refereed) Published
Through-silicon via (TSV) technology enables 3D-integrated devices with higher performance and lower cost as compared to 2D-integrated systems. This is mainly due to smaller dimensions of the package and shorter internal signal lengths with lower capacitive, resistive and inductive parasitics. This paper presents a novel low-cost fabrication technique for metal-filled TSVs with very high aspect ratios (>20). Nickel wires are placed in via holes of a silicon wafer by an automated magnetic assembly process and are used as a conductive path of the TSV. This metal filling technique enables the reliable fabrication of through-wafer vias with very high aspect ratios and potentially eliminates characteristic cost drivers in the TSV production such as advanced metallization processes, wafer thinning and general issues associated with thin-wafer handling.
Place, publisher, year, edition, pages
Institute of Physics (IOP), 2012. Vol. 22, no 10, 105001- p.
Electronics packaging, Silicon wafers, Wire
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-101062DOI: 10.1088/0960-1317/22/10/105001ISI: 000309219500001ScopusID: 2-s2.0-84866321637OAI: oai:DiVA.org:kth-101062DiVA: diva2:546126
FunderEU, European Research Council, 277879
QC 201208272012-08-272012-08-222012-12-07Bibliographically approved