Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
On the effect of water and oxygen in chemical vapor deposition of boron nitride
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 18, 5889-5893 p.Article in journal (Refereed) Published
Abstract [en]

Growth studies of sp(2)-hybridized boron nitride (BN) phases by thermal chemical vapor deposition (CVD) are presented; of particular interest is the presence of oxygen and water during growth. While Fourier transform infrared spectroscopy reveals the presence of B-N bonds and elemental analysis by elastic recoil detection analysis shows that the films are close to stoichiometric, although containing a few atomic percent oxygen and hydrogen, X-ray diffraction measurements show no indications for nucleation of any crystalline BN phases, despite change in N/B-ratio and/or process temperature. Thermodynamic modeling suggests that this is due to formation of strong B-O bonds already in the gas phase in the presence of water or oxygen during growth. This growth behavior is believed to be caused by an uncontrolled release of water and/or oxygen in the deposition chamber and highlights the sensitivity of the BN CVD process towards oxygen and water.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 520, no 18, 5889-5893 p.
Keyword [en]
Boron nitride; Chemical vapor deposition; Water; Oxygen
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79682DOI: 10.1016/j.tsf.2012.05.004ISI: 000306104100009OAI: oai:DiVA.org:liu-79682DiVA: diva2:544276
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2017-12-07

Open Access in DiVA

fulltext(575 kB)811 downloads
File information
File name FULLTEXT01.pdfFile size 575 kBChecksum SHA-512
0b0572ef297f244a5fb496a874e9204902d9046446ebd240d02ae363dd2954c03979a199dc2b66c6843fbefa8df336ebbb32d332fc60bac2eacfb1dbec030c31
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Pedersen, HenrikChubarov, MikhailHögberg, HansJensen, JensHenry, Anne
By organisation
Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
In the same journal
Thin Solid Films
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 811 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 168 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf