A high-linearity SiGe RF power amplifier for 3G and 4G small basestations
2012 (English)In: International journal of electronics (Print), ISSN 0020-7217, E-ISSN 1362-3060, Vol. 99, no 8, 1145-1153 p.Article in journal (Refereed) Published
This article presents the design and evaluation of a linear 3.3V SiGe power amplifier for 3G and 4G femtocells with 18dBm modulated output power at 2140 MHz. Different biasing schemes to achieve high linearity with low standby current were studied. The adjacent channel power ratio linearity performance with wide-band code division multiple access (3G) and long term evolution (4G) downlink signals were compared and differences analysed and explained.
Place, publisher, year, edition, pages
Taylor andamp; Francis , 2012. Vol. 99, no 8, 1145-1153 p.
power amplifier; WCDMA; LTE; biasing; linearity; ACPR
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79712DOI: 10.1080/00207217.2011.651695ISI: 000306287700008OAI: oai:DiVA.org:liu-79712DiVA: diva2:544084