Low-Frequency Noise in High-k LaLuO3/TiN MOSFETs
2012 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 78, no SI, 51-55 p.Article in journal (Refereed) Published
Low-frequency noise (LFN) characterization of high-k LaLuO3/TiN nMOS transistors is presented. The experimental results including the noise spectrum and normalized power noise density and mobility are reported. The noise results were successfully modeled to the correlated number and mobility fluctuation noise equation. High-k dielectric devices show lower mobility and roughly one to two orders of magnitude higher low-frequency noise which is comparable to the hafnium based oxide layers. The implementation of higher-k LaLuO3 seems to be a suitable candidate to the trade-off between equivalent oxide thickness scaling and low frequency noise.
Place, publisher, year, edition, pages
Elsevier, 2012. Vol. 78, no SI, 51-55 p.
Low-frequency noise, high-k dielectrics, mobility degradation, charge traps, characterization
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - ICT
IdentifiersURN: urn:nbn:se:kth:diva-95735DOI: 10.1016/j.sse.2012.05.070ISI: 000309313600010ScopusID: 2-s2.0-84866135278OAI: oai:DiVA.org:kth-95735DiVA: diva2:529040
ProjectsFundamental noise studies on strain-engineered and high-mobility nano-scale transistors
FunderSwedish Research Council, 2008-5465StandUp
This is the author’s version of a work that was accepted for publication in Solid-State Electronics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid-State Electronics, VOL 78,December 2012, Pages 51–55 DOI10.1016/j.sse.2012.05.070
QC 201210052012-10-052012-05-292015-11-30Bibliographically approved