SiC epitaxy growth using chloride-based CVD
2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 407, no 10, 1467-1471 p.Article in journal (Refereed) Published
The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 mu m/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1467-1471 p.
Silicon carbide, Chloride, Epitaxy, Doping, PL, DLTS
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77522DOI: 10.1016/j.physb.2011.09.063ISI: 000303149600004OAI: oai:DiVA.org:liu-77522DiVA: diva2:528611
Funding Agencies|The Swedish Energy Agency||Swedish Research Council||2012-05-282012-05-222015-03-11