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SiC epitaxy growth using chloride-based CVD
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7171-5383
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2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 407, no 10, 1467-1471 p.Article in journal (Refereed) Published
Abstract [en]

The growth of thick epitaxial SiC layers needed for high-voltage, high-power devices is investigated with the chloride-based chemical vapor deposition. High growth rates exceeding 100 mu m/h can be obtained, however to obtain device quality epilayers adjustments of the process parameters should be carried out appropriately for the chemistry used. Two different chemistry approaches are compared: addition of hydrogen chloride to the standard precursors or using methyltrichlorosilane, a molecule that contains silicon, carbon and chlorine. Optical and electrical techniques are used to characterize the layers.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1467-1471 p.
Keyword [en]
Silicon carbide, Chloride, Epitaxy, Doping, PL, DLTS
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77522DOI: 10.1016/j.physb.2011.09.063ISI: 000303149600004OAI: oai:DiVA.org:liu-77522DiVA: diva2:528611
Note
Funding Agencies|The Swedish Energy Agency||Swedish Research Council||Available from: 2012-05-28 Created: 2012-05-22 Last updated: 2017-12-07

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Henry, AnneLeone, StefanoBeyer, FranziskaPedersen, HenrikKordina, OlleAndersson, SvenJanzén, Erik
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