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Admittance spectroscopy of polymer-nanoparticle non-volatile memory devices
University of California, Santa Cruz. (Physics Department)ORCID iD: 0000-0002-2799-3490
University of California, Santa Cruz. (Physics Department)
IBM Research Division, San Jose, California. (Almaden Research Center)
IBM Research Division, San Jose, California. (Almaden Research Center)
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2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 89, 133510- p.Article in journal (Refereed) Published
Abstract [en]

Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly(4-n-hexylphenyldiphenylamine) examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, as well as evidence for similar transport in the lower-conductivity "off" state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect.

Place, publisher, year, edition, pages
2006. Vol. 89, 133510- p.
National Category
Engineering and Technology Physical Sciences
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URN: urn:nbn:se:liu:diva-77351DOI: 10.1063/1.2357560OAI: oai:DiVA.org:liu-77351DiVA: diva2:526384
Available from: 2012-06-07 Created: 2012-05-11 Last updated: 2017-12-07Bibliographically approved

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