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Modeling High Power Impulse Magnetron Sputtering Discharges
KTH, School of Electrical Engineering (EES), Space and Plasma Physics.
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

HiPIMS, high power impulse magnetron sputtering, is a promising technology that has attracted a lot of attention ever since its appearance. A time-dependent plasma discharge model has been developed for the ionization region in HiPIMS discharges. As a flexible modeling tool, it can be used to explore the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. The model development has proceeded in steps. A basic version IRM I is fitted to the experimental data from a HiPIMS discharge with 100 μs long pulses and an aluminum target. A close fit to the experimental current waveform, and values of density, temperature, gas rarefaction, as well as the degree of ionization shows the validity of the model. Then an improved version is first used for an investigation of reasons for deposition rate loss, and then fitted for another HiPIMS discharge with 400 μs long pulses and an aluminum target to investigate gas rarefaction, degree of ionization, degree of self sputtering, and the loss in deposition rate, respectively. Through these results from the model, we could analyse further the potential distribution and its evolution as well as the possibility of a high deposition rate window to optimize the HiPIMS discharge.

Besides this modeling, measurements of HiPIMS discharges with 100 μs long pulses and a copper target are made and analyzed. A description, based on three different types of current systems during the ignition, transition and steady phase, is used to describe the evolution of the current density distribution in the pulsed plasma. The internal current density ratio is a key transport parameter. It is reported how it varies with space and time, governing the cross-B resistivity and the energy of the charged particles. From the current ratio the electron cross-B transport can be obtained and used as essential input when modeling the axial electric field, governing the back-attraction of ions.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. , xii, 52 p.
Series
Trita-EE, ISSN 1653-5146 ; 2012:017
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-94002OAI: oai:DiVA.org:kth-94002DiVA: diva2:524870
Presentation
2012-05-25, Seminarierummet, Alfvénlaboratoriet, Teknikringen 31, KTH, Stockholm, 10:15 (English)
Opponent
Supervisors
Note
QC 20120504Available from: 2012-05-04 Created: 2012-05-04 Last updated: 2012-05-07Bibliographically approved
List of papers
1. An ionization region model for high-power impulse magnetron sputtering discharges
Open this publication in new window or tab >>An ionization region model for high-power impulse magnetron sputtering discharges
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2011 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 20, no 6, 065007- p.Article in journal (Refereed) Published
Abstract [en]

A time-dependent plasma discharge model has been developed for the ionization region in a high-power impulse magnetron sputtering (HiPIMS) discharge. It provides a flexible modeling tool to explore, e. g., the temporal variations of the ionized fractions of the working gas and the sputtered vapor, the electron density and temperature, and the gas rarefaction and refill processes. A separation is made between aspects that can be followed with a certain precision, based on known data, such as excitation rates, sputtering and secondary emission yield, and aspects that need to be treated as uncertain and defined by assumptions. The input parameters in the model can be changed to fit different specific applications. Examples of such changes are the gas and target material, the electric pulse forms of current and voltage, and the device geometry. A basic version, ionization region model I, using a thermal electron population, singly charged ions, and ion losses by isotropic diffusion is described here. It is fitted to the experimental data from a HiPIMS discharge in argon operated with 100 mu s long pulses and a 15 cm diameter aluminum target. Already this basic version gives a close fit to the experimentally observed current waveform, and values of electron density n(e), the electron temperature T(e), the degree of gas rarefaction, and the degree of ionization of the sputtered metal that are consistent with experimental data. We take some selected examples to illustrate how the model can be used to throw light on the internal workings of these discharges: the effect of varying power efficiency, the gas rarefaction and refill during a HiPIMS pulse, and the mechanisms determining the electron temperature.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2011
Keyword
GLOBAL-MODEL, ELECTRON-EMISSION, PLASMAS, ARGON, DENSITIES, ALUMINUM, METALS
National Category
Fusion, Plasma and Space Physics
Identifiers
urn:nbn:se:kth:diva-63269 (URN)10.1088/0963-0252/20/6/065007 (DOI)000298139300008 ()2-s2.0-82755162844 (Scopus ID)
Funder
Swedish Research Council
Note

QC 20120125

Available from: 2012-01-25 Created: 2012-01-23 Last updated: 2017-12-08Bibliographically approved
2. Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields
Open this publication in new window or tab >>Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields
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2012 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 21, no 2, 025005- p.Article in journal (Refereed) Published
Abstract [en]

The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E-z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E-z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a 'sweet spot' in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Pi(Townsend) is proposed. A parametric analysis of Pi(Townsend) shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength.

Keyword
Deposition rates, Electric fields, Ionization potential, Magnetic fields, Magnetron sputtering, Plasma sheaths
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-93998 (URN)10.1088/0963-0252/21/2/025005 (DOI)000302779400019 ()2-s2.0-84859609472 (Scopus ID)
Funder
Swedish Research Council
Note
QC 20120504Available from: 2012-05-04 Created: 2012-05-04 Last updated: 2017-12-07Bibliographically approved
3. Gas rarefaction and the time evolution of long high-power impulse magnetron sputtering pulses
Open this publication in new window or tab >>Gas rarefaction and the time evolution of long high-power impulse magnetron sputtering pulses
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2012 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 21, no 4, 045004- p.Article in journal (Refereed) Published
Abstract [en]

Model studies of 400 mu s long discharge pulses in high-power impulse magnetron sputtering have been made to study the gas dynamics and plasma chemistry in this type of pulsed processing plasma. Data are taken from an experiment using square voltage pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The study is limited to low power densities, < 0.5 kW cm(-2), in which the discharge is far away from the runaway self-sputtering mode. The model used is the ionization region model, a time-dependent plasma chemistry discharge model developed for the ionization region in magnetron sputtering discharges. It gives a close fit to the discharge current during the whole pulse, both an initial high-current transient and a later plateau value of constant lower current. The discharge current peak is found to precede a maximum in gas rarefaction of the order of Delta n(Ar)/n(Ar),(0) approximate to 50%. The time durations of the high-current transient, and of the rarefaction maximum, are determined by the time it takes to establish a steady-state diffusional refill of process gas from the surrounding volume. The dominating mechanism for gas rarefaction is ionization losses, with only about 30% due to the sputter wind kick-out process. During the high-current transient, the degree of sputtered metal ionization reaches 65-75%, and then drops to 30-35% in the plateau phase. The degree of self-sputtering (defined here as the metal ion fraction of the total ion current to the target) also varies during the pulse. It grows from zero at pulse start to a maximum of 65-70% coinciding in time with the maximum gas rarefaction, and then stabilizes in the range 40-45% during the plateau phase. The loss in deposition rate that can be attributed to the back-attraction of the ionized sputtered species is also estimated from the model. It is low during the initial 10-20 mu s, peaks around 60% during the high-current transient, and finally stabilizes around 30% during the plateau phase.

Keyword
Physical Vapor-Deposition, Monte-Carlo-Simulation, Cross-Sections, Thin-Films, Discharge, Plasma, Target, Ionization, Densities, Electrons
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-93999 (URN)10.1088/0963-0252/21/4/045004 (DOI)000307307600007 ()2-s2.0-84862743104 (Scopus ID)
Funder
Swedish Research Council, 621-2008-3222
Note

QC 20121010. Updated from submitted to published.

Available from: 2012-05-04 Created: 2012-05-04 Last updated: 2017-12-07Bibliographically approved
4. Internal current measurements in high power impulse magnetron sputtering
Open this publication in new window or tab >>Internal current measurements in high power impulse magnetron sputtering
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2011 (English)In: Plasma sources science & technology (Print), ISSN 0963-0252, E-ISSN 1361-6595, Vol. 20, no 4, 045003- p.Article in journal (Refereed) Published
Abstract [en]

The transport of charged particles in a high power impulse magnetron sputtering (HiPIMS) discharge is of considerable interest when optimizing this promising deposition technique with respect to deposition rate and control of the ion acceleration. In this study the internal current densities J(phi) (azimuthal direction) and J(z) (axial direction) have therefore been spatially and temporally resolved in the bulk plasma region above a cylindrical magnetron using Rogowski coils. From the measurements a phenomenological model has been constructed describing the evolution of the current density in this pulsed plasma. The core of the model is based on three different types of current systems, which characterize the operating transport mechanisms, such as current transport along and across magnetic field lines. There is a gradual change between these current systems during the initiation, build-up and steady state of a HiPIMS plasma. Furthermore, the data also show that there are spatial and temporal variations of the key transport parameter J(phi)/J(z), governing the cross-B resistivity and also the energy of the charged particles. The previously reported faster-than-Bohm cross-B electron transport is verified here, but not for all locations. These results on the plasma dynamics are essential input when modeling the axial electric field, governing the back-attraction of ionized sputtered material, and might furthermore provide a link between the different resistivities reported in HiPIMS, pulsed-DC, and DC magnetron discharges.

Keyword
physical vapor-deposition, thin-films, discharge
National Category
Fusion, Plasma and Space Physics
Identifiers
urn:nbn:se:kth:diva-46864 (URN)10.1088/0963-0252/20/4/045003 (DOI)000295829800005 ()2-s2.0-80051613409 (Scopus ID)
Funder
Swedish Research Council
Note
QC 20111107Available from: 2011-11-07 Created: 2011-11-07 Last updated: 2017-12-08Bibliographically approved

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