Cubic SiC formation on the C-face of 6H-SiC (0001) substrates
2012 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 348, no 1, 91-96 p.Article in journal (Refereed) Published
Nucleation and subsequent growth of cubic SiC (111) on Si- and C-faces of nominally on-axis 6H-SiC substrates was investigated. More uniform nuclei and twin boundary distribution was observed when 3C-SiC was grown on the C-face. This was attributed to a lower critical supersaturation ratio. A new type of defects which appear as pits in the C-face 3C-SiC layers related to homoepitaxial 6H-SiC spiral growth was found and described. The evaluation of the growth driving force for both polar faces showed that the homoepitaxial 6H-SiC spirals were not overgrown on the C-face due to low maximum supersaturation ratio. The XRD ω-rocking characterization shows a better structural quality of the 3C-SiC was grown on the Si-face, however on the C-face the uniformity over the whole sample was higher. Unintentional doping by N (~1016 cm-3) was slightly higher on the C-face while Al doping was higher (~1014 cm-3) on the Si-face of the grown material, similarly to the doping of hexagonal SiC polytypes.
Place, publisher, year, edition, pages
2012. Vol. 348, no 1, 91-96 p.
A1. Nucleation, A1. Characterization, A1. Polar surfaces A3. Vapor phase epitaxy, B1. Cubic Silicon Carbide.
IdentifiersURN: urn:nbn:se:liu:diva-76363DOI: 10.1016/j.jcrysgro.2012.03.053ISI: 000303937900017OAI: oai:DiVA.org:liu-76363DiVA: diva2:514112
funding agencies|Swedish Research Council (VR)| 2008-5753 |Angpanneforeningens Forskningsstiftelse||Ericssons Research Foundation||2012-04-052012-04-052012-06-20Bibliographically approved