Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Effects of P implantation and post-implantation annealing on defect formation in ZnO
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6405-9509
University of Florida.
University of Florida.
Show others and affiliations
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 4, 043520- p.Article in journal (Refereed) Published
Abstract [en]

Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to examine the effects of P implantation and post-implantation annealing on defect formation in ZnO single crystals. From ODMR, the main defects created by ion implantation include oxygen and zinc vacancies as a well as a deep donor labeled as PD. The formation of the PD defect is likely promoted by the presence of P as it could only be detected in the P-containing ZnO. The V-O and PD centers are found to exhibit low thermal stability and can be annealed out at 800 degrees C. On the other hand, a new set of defects, such as Z, T, and D* centers, is detected after annealing. Based on measured spectral dependences of the ODMR signals, the V-O, V-Zn, and PD centers are shown to participate in spin-dependent recombination processes related to red emissions, whereas the Z, T, and D* centers are involved in radiative recombination over a wide spectral range of 1.55-2.5 eV. From the PL measurements, combined effects of implantation and annealing also lead to appearance of a new PL band peaking at similar to 3.156 eV, likely due to donor-acceptor-pair recombination. The formation of the involved deep acceptor is concluded to be facilitated by the presence of P.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 111, no 4, 043520- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-76194DOI: 10.1063/1.3687919ISI: 000300948600037OAI: oai:DiVA.org:liu-76194DiVA: diva2:513204
Note

Funding Agencies|Swedish Research Council|621-2010-3971|National Basic Research Program of China|2011CB925604|

Available from: 2012-03-31 Created: 2012-03-30 Last updated: 2017-12-07

Open Access in DiVA

fulltext(1495 kB)446 downloads
File information
File name FULLTEXT01.pdfFile size 1495 kBChecksum SHA-512
e531b81c36c97b8d84c221377f9c8e12d8b00465704fae6c4b214cafed442a6ccbef1a1a3d8bdacb8164ab0aa546d01c1feeb4da227f6e5b2a8bb2868db69136
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Wang, XingjunChen, WeiminBuyanova, Irina
By organisation
Functional Electronic MaterialsThe Institute of Technology
In the same journal
Journal of Applied Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 446 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 171 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf