Effects of P implantation and post-implantation annealing on defect formation in ZnO
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 4, 043520- p.Article in journal (Refereed) Published
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to examine the effects of P implantation and post-implantation annealing on defect formation in ZnO single crystals. From ODMR, the main defects created by ion implantation include oxygen and zinc vacancies as a well as a deep donor labeled as PD. The formation of the PD defect is likely promoted by the presence of P as it could only be detected in the P-containing ZnO. The V-O and PD centers are found to exhibit low thermal stability and can be annealed out at 800 degrees C. On the other hand, a new set of defects, such as Z, T, and D* centers, is detected after annealing. Based on measured spectral dependences of the ODMR signals, the V-O, V-Zn, and PD centers are shown to participate in spin-dependent recombination processes related to red emissions, whereas the Z, T, and D* centers are involved in radiative recombination over a wide spectral range of 1.55-2.5 eV. From the PL measurements, combined effects of implantation and annealing also lead to appearance of a new PL band peaking at similar to 3.156 eV, likely due to donor-acceptor-pair recombination. The formation of the involved deep acceptor is concluded to be facilitated by the presence of P.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 111, no 4, 043520- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-76194DOI: 10.1063/1.3687919ISI: 000300948600037OAI: oai:DiVA.org:liu-76194DiVA: diva2:513204
Funding Agencies|Swedish Research Council|621-2010-3971|National Basic Research Program of China|2011CB925604|2012-03-312012-03-302013-10-02