Optical and structural studies of homoepitaxially grown m-plane GaN
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 17, 172108- p.Article in journal (Refereed) Published
We report on cathodoluminescence (CL) and transmission electron microscopy (TEM) studies of m-plane Mg-doped GaN layers grown by metal-organic vapor phase epitaxy (MOVPE). The layers contain basal plane and prismatic stacking faults (SFs) with a density of ~106 cm-1. Broad emission peaks commonly ascribed to SF were found to be insignificant in these samples. However, a set of quite strong and sharp lines were detected in the same spectral region 3.36-3.42 eV. The observed peaks are tentatively explained as excitons bound to some point defects by analogy with p-type GaAs, since donor-acceptor pair (DAP) recombination was ruled out by the CL mapping experiments.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 100, no 17, 172108- p.
GaN, m-plane, Mg-doping, stacking faults, cathodoluminescence
IdentifiersURN: urn:nbn:se:liu:diva-75427DOI: 10.1063/1.4706258ISI: 000303340300039OAI: oai:DiVA.org:liu-75427DiVA: diva2:506671
funding agencies|Swedish Energy Agency||Swedish Research Council (VR) Linnaeus Environment LiLi-NFM at Linkoping||Carl Trygger Foundation||Swedish Governmental Agency for Innovation Systems (VINNOVA)||National Science Foundation, Division of Materials Research||2012-02-292012-02-292016-08-31Bibliographically approved