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Electronic structure of H/Ge(111)1x1 studied by angle-resolved photoelectron spectroscopy
Linköping University.
Karlstad University, Faculty of Technology and Science, Department of Physics and Electrical Engineering. (Materialvetenskap)ORCID iD: 0000-0003-4165-1515
Linköping University.
2009 (English)In: Physical Review B, ISSN 1098-0121, Vol. 80, article id 193403Article in journal (Refereed) Published
Abstract [en]

The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectroscopy. Spectra were measured along the high-symmetry lines of the 1×1 surface Brillouin zone. In the G-K-M direction, two surface states, labeled a and a1, were found in the lower and upper band-gap pockets. The a and a1 surface states are associated with the Ge-H bonds and the Ge-Ge backbonds, respectively. In the G-M direction, only the Ge-H surface state, a, can be identified. It is found in the band-gap pocket around the M point. The two hydrogen-induced surface states on H/Ge(111)1×1 show strong similarities with the corresponding surface states on H/Si(111)1×1. Results from H/Ge(111)1×1 and H/Si(111)1×1 are compared in this Brief Report

Place, publisher, year, edition, pages
American Physical society , 2009. Vol. 80, article id 193403
National Category
Physical Sciences
Research subject
Physics
Identifiers
URN: urn:nbn:se:kau:diva-9644DOI: 10.1103/PhysRevB.80.193403OAI: oai:DiVA.org:kau-9644DiVA, id: diva2:493145
Available from: 2012-02-08 Created: 2012-02-08 Last updated: 2015-07-20Bibliographically approved

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