Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Film Actuator Based Mems Device and Method
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).
KTH, School of Electrical Engineering (EES), Microsystem Technology (Changed name 20121201).ORCID iD: 0000-0001-9552-4234
2004 (English)Patent (Other (popular science, discussion, etc.))
Abstract [en]

The present invention discloses a Micro-Electro-Mechanical systems (MEMS) device suitable for use in a range of applications from DC, such as switching electrical signal lines, to RF applications such as tunable capacitors and switches. In an embodiment of the invention, the device comprises a bottom substrate and a top substrate separated at a fixed distance from each other. Disposed between the substrates is a flexible S-shaped membrane having an electrode or an electrically conducting electrode layer with one end attached to the top substrate and the other end in contact with the bottom substrate. An electrically conducting contact block is attached to the underside of the membrane actuator for short circuiting a signal line when the switch is in the closed position. When a voltage is applied between the membrane and an electrode layer on the bottom substrate, the membrane is induced by electrostatic force to deflect in a rolling wave-like motion such that the contact block is displaced into contact with the signal line. The device can be actively opened when a voltage is applied between the membrane actuator and a electrode layer on the top substrate causing the contact block to displace upward breaking contact with the signal line. The MEMS switching device is applicable for use in a switch matrix board for automatically switching telephone lines or in RF applications in the form of a tunable capacitor.

Place, publisher, year, edition, pages
2004.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-77834OAI: oai:DiVA.org:kth-77834DiVA: diva2:492126
Patent
US 20070256917A1
Note

QS 2015

Available from: 2012-02-08 Created: 2012-02-07 Last updated: 2015-01-16Bibliographically approved

Open Access in DiVA

fulltext(314 kB)51 downloads
File information
File name FULLTEXT01.pdfFile size 314 kBChecksum SHA-512
de7dfdc4fab942026798632ed2ff7c779d0ac7a33f35f2d9f691c7e20bacd8906b42160693f01b45ce6e642b17691b6f0a9910636928fd251edd9bd11802f821
Type fulltextMimetype application/pdf

Other links

Espacenet.com

Search in DiVA

By author/editor
Oberhammer, JoachimStemme, Göran
By organisation
Microsystem Technology (Changed name 20121201)
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 51 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

urn-nbn

Altmetric score

urn-nbn
Total: 41 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf