Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 023501Article in journal (Refereed) Published
Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 111, no 023501
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-74675DOI: 10.1063/1.3676576ISI: 000299792400013OAI: oai:DiVA.org:liu-74675DiVA: diva2:490064
funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute||2012-02-032012-02-032013-10-02