Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Repulsive van der Waals forces due to hydrogen exposure on bilayer graphene
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Theoretical Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-6281-868X
2012 (English)In: Physical Review A. Atomic, Molecular, and Optical Physics, ISSN 1050-2947, E-ISSN 1094-1622, Vol. 85, no 1, 012508- p.Article in journal (Refereed) Published
Abstract [en]

We consider the effect of atomic hydrogen exposure to a system of two undoped sheets of graphene grown near a silica surface (the first adsorbed to the surface and the second freestanding near the surface). In the absence of atomic hydrogen, the van der Waals force between the sheets is attractive at all separations, causing the sheets to come closer together. However, with the addition of atomic hydrogen between the sheets, the long-range van der Waals interaction turns repulsive at a critical concentration. The underlying triple layer structure (SiO(2)-atomic hydrogen gas-air) gives rise to a long-range repulsion that at large-enough separations dominates over the more rapidly decaying attraction between the two-dimensional undoped graphene sheets (and between the outer graphene sheet and SiO(2)). This may be an avenue to tune the separation between two graphene sheets with the gas concentration. The doping of the graphene layers increases the attractive part of the interaction and hence reduces the net repulsive interaction.

Place, publisher, year, edition, pages
American Physical Society , 2012. Vol. 85, no 1, 012508- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-74639DOI: 10.1103/PhysRevA.85.012508ISI: 000298984700002OAI: oai:DiVA.org:liu-74639DiVA: diva2:489455
Note
Funding Agencies|VR Contract|70529001|Available from: 2012-02-03 Created: 2012-02-03 Last updated: 2017-12-08

Open Access in DiVA

fulltext(608 kB)558 downloads
File information
File name FULLTEXT01.pdfFile size 608 kBChecksum SHA-512
53b9f0d5d84d223eae541c306fb83362eb6aee137f2dd198f6d7662ab464bf0691710daa004eccb3df22475ad267241fd6c03825d0f1eae0a325bb74b525be9f
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Boström, MathiasSernelius, Bo
By organisation
Theoretical PhysicsThe Institute of Technology
In the same journal
Physical Review A. Atomic, Molecular, and Optical Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 558 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 86 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf