Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, no 4, 1076-1083 p.Article in journal (Refereed) Published
Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2012. Vol. 59, no 4, 1076-1083 p.
Bipolar junction transistor (BJT), emitter coupled logic (ECL), high-temperature integrated circuits (ICs), OR-NOR gate, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-72233DOI: 10.1109/TED.2011.2182514ISI: 000302083800028ScopusID: 2-s2.0-84859210119OAI: oai:DiVA.org:kth-72233DiVA: diva2:487321
FunderStandUpSwedish Foundation for Strategic Research , RE10-0011
QC 201506242012-01-312012-01-312016-07-18Bibliographically approved