Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6459-749X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2012 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 59, no 4, 1076-1083 p.Article in journal (Refereed) Published
Abstract [en]

Operation up to 300 degrees C of low-voltage 4H-SiC n-p-n bipolar transistors and digital integrated circuits based on emitter-coupled logic is demonstrated. Stable noise margins of about 1 V are reported for a two-input OR-NOR gate operated on - 15 V supply voltage from 27 degrees C up to 300 degrees C. In the same temperature range, an oscillation frequency of about 2 MHz is also reported for a three-stage ring oscillator.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE), 2012. Vol. 59, no 4, 1076-1083 p.
Keyword [en]
Bipolar junction transistor (BJT), emitter coupled logic (ECL), high-temperature integrated circuits (ICs), OR-NOR gate, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
URN: urn:nbn:se:kth:diva-72233DOI: 10.1109/TED.2011.2182514ISI: 000302083800028Scopus ID: 2-s2.0-84859210119OAI: oai:DiVA.org:kth-72233DiVA: diva2:487321
Projects
SSF HOTSiC
Funder
StandUpSwedish Foundation for Strategic Research , RE10-0011
Note

QC 20150624

Available from: 2012-01-31 Created: 2012-01-31 Last updated: 2017-12-08Bibliographically approved
In thesis
1. Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
Open this publication in new window or tab >>Silicon Carbide Bipolar Integrated Circuits for High Temperature Applications
2012 (English)Licentiate thesis, comprehensive summary (Other academic)
Abstract [en]

Silicon carbide (SiC) is a semiconductor that provides significant advantages for high-power and high-temperature applications thanks to its wide bandgap, which is several times larger than silicon. The resulting high breakdown field, high thermal conductivity and high intrinsic temperature (well above 600 °C) allow high temperature operation of SiC devices and relaxed cooling requirements. In particular, SiC bipolar junction transistors (BJTs) are suitable for high temperature integrated circuits (ICs), due to the absence of a gate oxide.

This work focuses on design, fabrication and characterization of the first 4H-SiC integrated circuits realized at KTH. It deals with basic bipolar ICs suitable for high temperature and low voltage applications. Operation up to 300 °C of low-voltage 4H-SiC NPN bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) has been demonstrated. In the temperature range 27 - 300 °C stable noise margins of about 1 V have been achieved for a 2-input OR-NOR gate operated on -15 V supply voltage, and an oscillation frequency of about 2 MHz has been observed for a 3-stage ring oscillator.

The possibility of realizing PNP transistors and passive devices in the same process technology has also been investigated.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2012. xiv, 57 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2012:04
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-63804 (URN)978-91-7501-244-5 (ISBN)
Presentation
2012-02-15, Sal/Hall C1, KTH Electrum, Isafjordsgatan 26, Kista, 10:15 (English)
Opponent
Supervisors
Note
QC 20120131Available from: 2012-01-31 Created: 2012-01-24 Last updated: 2012-01-31Bibliographically approved
2. Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
Open this publication in new window or tab >>Silicon Carbide BipolarTechnology for High Temperature Integrated Circuits
2014 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The availability of integrated circuits (ICs) capable of 500 or 600° C operation can be extremely beneficial for many important applications, such as transportation and energy sector industry. It can in fact enable the realization of improved sensing and control of turbine engine combustion leading to better fuel efficiency and reduced pollution. In addition, the possibility of placing integrated circuits in engine hot-sections can significantly reduce the weight and improve the reliability of automobiles and aircrafts, eliminating extra wires and cooling systems.

In order to develop such electronics semiconductors with superior high temperature characteristics compared to Si are required. Thanks to its wide bandgap,  almost three times that of Si, Silicon carbide (SiC) has been suggested for this purpose. Its low intrinsic carrier concentration, orders of magnitude lower than that of Si, makes SiC devices capable of operating at much higher temperatures than Si devices.

In this thesis solutions for 600° C SiC bipolar ICs have been investigated in depth at device physics, circuit and process integration level. Successful operation of devices and circuits  has been proven from -40 up to 600° C.

The developed technology features NPN and lateral PNP transistors, two levels of interconnects and one extra metal level acting as over-layer metallization for device contacts. The improved SiC etching and passivation procedures have provided NPN transistors with high current gain of approximately 200. Furthermore, non-monotonous current gain temperature dependences have been observed for NPN and PNP transistors. The current gain of NPN transistors increases with temperature at high enough temperatures above 300° C  depending on the base doping concentration. The current gain of lateral PNP transistors has, instead, shown a maximum of approximately 37 around 0° C.

Finally, high-temperature operation of 2-input ECL-based OR-NOR gates and  3- and 11-stage ring oscillators has been demonstrated. For the OR-NOR gates stable noise margins of approximately 1 or 1.5 V, depending on the gate design, have been observed up to 600° C with a delay-power consumption product of approximately 100 nJ in the range -40 to 500° C.  Ring oscillators with different designs, including more than 100 devices, have been  successfully tested in the range 27 to 300° C. Non-monotonous and almost constant temperature dependences have been observed for the oscillation frequency of 3- and 11-stage ring oscillator, respectively. In addition, room temperature propagation delays of a single inverter stage have been estimated to be approximately 100 and 40 ns for 3- and 11-stage ring oscillators, respectively. 

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2014. viii, 120 p.
Series
TRITA-ICT/MAP AVH, ISSN 1653-7610 ; 2014:07
Keyword
silicon carbide (SiC), bipolar junction transistor (BJT), current gain, surface passivation, SiC etching, complementary bipolar, lateral PNP, Darlington transistors, SPICE modeling, high-temperature, integrated circuits, emitter coupled logic (ECL)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:kth:diva-145401 (URN)978-91-7595-135-5 (ISBN)
Public defence
2014-06-10, Sal D, Forum, Isafjordgatan 39, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20140522

Available from: 2014-05-22 Created: 2014-05-19 Last updated: 2014-05-22Bibliographically approved

Open Access in DiVA

LanniTED2012(1646 kB)61 downloads
File information
File name FULLTEXT01.pdfFile size 1646 kBChecksum SHA-512
e4654dc757ae7a2dd76c836256e8b5f66b6abe0b6262a8fae67dddab80da183479bf7054965d29ed961b7bc0cfda712cdf6358b55f40c10f30e1706cf71f4be7
Type fulltextMimetype application/pdf

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Lanni, LuigiaGhandi, RezaMalm, B. GunnarZetterling, Carl-Mikael
By organisation
Integrated Devices and Circuits
In the same journal
IEEE Transactions on Electron Devices
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
Total: 61 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 183 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf