High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
2012 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 338, no 1, 52-56 p.Article in journal (Refereed) Published
We report on a growth of AlN at reduced temperatures of 1100 C and 1200 C in a horizontal-tube hot-wall metalorganic chemical vapor deposition reactor configured for operation at temperatures of up to 15001600 C and using a joint delivery of precursors. We present a simple route - as viewed in the context of the elaborate multilayer growth approaches with pulsed ammonia supply - for the AlN growth process on SiC substrates at the reduced temperature of 1200 C. The established growth conditions in conjunction with the particular in-situ intervening SiC substrate treatment are considered pertinent to the accomplishment of crystalline, relatively thin, ∼700 nm, single AlN layers of high-quality. The feedback is obtained from surface morphology, cathodoluminescence and secondary ion mass spectrometry characterization.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 338, no 1, 52-56 p.
A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting IIIV materials
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-74117DOI: 10.1016/j.jcrysgro.2011.10.052OAI: oai:DiVA.org:liu-74117DiVA: diva2:480571