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Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Université Montpellier 2 and CNRS.
Aristotle University of Thessaloniki.
Université Montpellier 2 and CNRS.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
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2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 314-317, Trans Tech Publications Inc., 2011, 314-317 p.Conference paper, Published paper (Refereed)
Abstract [en]

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 314-317 p.
Keyword [en]
High Resolution Transmission Electron Microscopy (HRTEM), Inter-Well Coupling, Low Temperature Photoluminescence, Quantum Well Approach, Silicon Carbide Stacking Faults
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73603DOI: 10.4028/www.scientific.net/MSF.679-680.314OAI: oai:DiVA.org:liu-73603DiVA: diva2:474878
Conference
ECSCRM2010, Oslo, Norway
Available from: 2012-01-10 Created: 2012-01-10 Last updated: 2014-10-08

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