Chloride based CVD of 3C-SiC on (0001) α-SiC substrates
2011 (English)In: Materials Science Forum Vols. 679-680 (2011) pp 75-78, Trans Tech Publications Inc., 2011, 75-78 p.Conference paper (Refereed)
A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely single-domain material of very high purity and of excellent electrical characteristics. A growth rate of up to 10 μm/h and a low background doping enable deposition of epitaxial layers suitable for MOSFET devices.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2011. 75-78 p.
epitaxial growth, chloride-based CVD, on-axis, 3C-SiC
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-73587DOI: 10.4028/www.scientific.net/MSF.679-680.75OAI: oai:DiVA.org:liu-73587DiVA: diva2:474756
ECSCRM 2010, Oslo, Norway