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Studies of Li intercalation of hydrogenated graphene on SiC(0001)
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
MAX-lab, Lund University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2012 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 606, no 3-4, 401-406 p.Article in journal (Refereed) Published
Abstract [en]

The effects of Li deposition on hydrogenated bilayer graphene on SiC(0001) samples, i.e. on quasi-freestanding bilayer graphene samples, are studied using low energy electron microscopy, micro-low-energy electron diffraction and photoelectron spectroscopy. After deposition, some Li atoms form islands on the surface creating defects that are observed to disappear after annealing. Some other Li atoms are found to penetrate through the bilayer graphene sample and into the interface where H already resides. This is revealed by the existence of shifted components, related to H–SiC and Li–SiC bonding, in recorded core level spectra. The Dirac point is found to exhibit a rigid shift to about 1.25 eV below the Fermi level, indicating strong electron doping of the graphene by the deposited Li. After annealing the sample at 300–400 °C formation of LiH at the interface is suggested from the observed change of the dipole layer at the interface. Annealing at 600 °C or higher removes both Li and H from the sample and a monolayer graphene sample is re-established. The Li thus promotes the removal of H from the interface at a considerably lower temperature than after pure H intercalation.

Place, publisher, year, edition, pages
2012. Vol. 606, no 3-4, 401-406 p.
Keyword [en]
Graphene, Bilayer, Hydrogenation, Li, LEEM, PES, LEED, ARPES
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-73546DOI: 10.1016/j.susc.2011.10.023ISI: 000300458600045OAI: oai:DiVA.org:liu-73546DiVA: diva2:474272
Available from: 2012-01-09 Created: 2012-01-09 Last updated: 2017-12-08

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