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Sideband asymmetries in RF Power LDMOS Before and After Digital Predistortion
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik. (Elektronik)
University of Gävle, Department of Technology and Built Environment, Ämnesavdelningen för elektronik. (Elektronik)
University of Gävle, Center for RF Measurement Technologies.
Infineon Technologies.
2009 (English)Conference paper, Published paper (Other academic)
Abstract [en]

 The merging of the fields of RF engineering and signal processing has introduced concepts such as behavioral modeling and enabled digital linearization schemes for wireless devices, such as power amplifiers (PAs). Despite that this process has been going on for a number of years much work remains to be done. The links between physical behavior and mathematical models are far from well-understood as are the optimum strategies for device design. This study focus on digital predistortion properties of a one-stage PA consisting of a power transistor mounted in a test fixture. The device under test (DUT) is an Infineon PTF210451E, a 45W transistor intended for usage in the frequency bands 2010-2025 MHz and 2110-2170 MHz. The test fixture is also designed by Infineon Technologies.  The signal types used in the measurements are single and double carrier wideband code division multiple access (WCDMA) signals. The double carrier WCDMA signals have tone-spacings of 5, 10 and 15 MHz. Normal two-tone measurements are also presented. 

Place, publisher, year, edition, pages
2009.
National Category
Telecommunications Signal Processing
Identifiers
URN: urn:nbn:se:hig:diva-11176OAI: oai:DiVA.org:hig-11176DiVA: diva2:471223
Conference
Radio Frequency Measurement Technology Conference
Available from: 2012-01-03 Created: 2012-01-02 Last updated: 2012-01-06Bibliographically approved

Open Access in DiVA

RFMTC09(27 kB)617 downloads
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Type fulltextMimetype application/pdf

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Landin, PerIsaksson, MagnusKeskitalo, Niklas
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CiteExportLink to record
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