Epitaxial CVD growthof sp2-hybridized boron nitrideusing aluminum nitride as buffer layer
2011 (English)In: Physica Status Solidi. Rapid Research Letters, ISSN 1862-6254, E-ISSN 1862-6270, Vol. 5, no 10-11, 397-399 p.Article in journal (Refereed) Published
Epitaxial growth of sp2-hybridized boron nitride (BN) using chemical vapour deposition, with ammonia and triethyl boron as precursors, is enabled on sapphire by introducing an aluminium nitride (AlN) buffer layer. This buffer layer is formed by initial nitridation of the substrate. Epitaxial growth is verified by X-ray diffraction measurements in Bragg–Brentano configuration, pole figure measurements and transmission electron microscopy. The in-plane stretching vibration of sp2-hybridized BN is observed at 1366 cm–1 from Raman spectroscopy. Time-of-flight elastic recoil detection analysis confirms almost perfect stoichiometric BN with low concentration of carbon, oxygen and hydrogen contaminations.
Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2011. Vol. 5, no 10-11, 397-399 p.
chemical vapor deposition;BN;epitaxy;X-ray diffraction
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-73160DOI: 10.1002/pssr.201105410ISI: 000297747600014OAI: oai:DiVA.org:liu-73160DiVA: diva2:467821