A built-in current sensor using thin-film transistors
2005 (English)In: Second Conference on Microelectronics, Microsystems and Nanotechnology, Institute of Physics Publishing (IOPP), 2005, Vol. 10, no 1, 289-292 p.Conference paper (Refereed)
A simple current mirror using TFTs with input terminals which are capacitively coupled to the TFT gate, is used in this work, to design a built-in current sensor (BICS). The important feature in this application is that the voltage drop across the sensing TFT device can be reduced to almost zero value, while preserving transistor operation in the saturation region. This makes the proposed BICS appropriate for TFT applications without affecting the circuit operation. It also results in adequate linearity for the current monitoring, making the structure applicable to digital as well as to analog and mixed-signal circuit testing.
Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2005. Vol. 10, no 1, 289-292 p.
, journal of physics conference series, ISSN 1742-6588 ; 10
IdentifiersURN: urn:nbn:se:kth:diva-50972DOI: 10.1088/1742-6596/10/1/071ISI: 000231087900071OAI: oai:DiVA.org:kth-50972DiVA: diva2:463133
Second Conference on Microelectronics, Microsystems and Nanotechnology
Projects“Design of Integrated Circuits using T.F.T.s“ under the framework “PYTHAGORAS: Study and Development of T.F.T.s models – Design and Development of Li-ion batteries for their supply” funded by the Greek Ministry of National Education and Religious Affairs.
QC 201201112012-01-112011-12-082012-01-11Bibliographically approved