Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study
2011 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 107, no 19, 195501- p.Article in journal (Refereed) Published
Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.
Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 107, no 19, 195501- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-72653DOI: 10.1103/PhysRevLett.107.195501ISI: 000297006100005OAI: oai:DiVA.org:liu-72653DiVA: diva2:461139
Funding Agencies|Swedish Foundation for Strategic Research||Swedish Research Council||Swedish Energy Agency||Swedish National Infrastructure for Computing|SNIC 011/04-8SNIC001-10-223|Knut and Alice Wallenberg Foundation||2011-12-022011-12-022015-05-19