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Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography
National Institute for Materials Science.ORCID iD: 0000-0003-2562-0540
National Institute for Materials Science.
National Institute for Materials Science.
2010 (English)In: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 21, no 28, 285307- p.Article in journal (Refereed) Published
Abstract [en]

A novel top-down approach for the controllable fabrication of semiconductor nanostructures exhibiting quantum effects is described. By decomposing metal-rich precursor gas molecules with an electron beam, a sub-10 nm metal pattern can be formed and subsequently transferred to a semiconductor substrate. In such a way monocrystalline silicon nanodots and nanowires are produced as revealed by transmission electron microscopy. It is also shown how through controlled thermal or chemical oxidation the nanostructure surface can be passivated. By providing direct access to the sub-10 nm size range this method possesses promising potential for application in the quantum dot and nanoelectronics fields.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2010. Vol. 21, no 28, 285307- p.
Keyword [en]
silicon nanostructures, quantum dot, nanowire, EBID
National Category
Accelerator Physics and Instrumentation
URN: urn:nbn:se:kth:diva-49005DOI: 10.1088/0957-4484/21/28/285307ISI: 000279259100020OAI: diva2:459125
QC 20111129Available from: 2012-01-27 Created: 2011-11-24 Last updated: 2012-01-27Bibliographically approved

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Sychugov, Ilya
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