Toward 17µm pitch heterogeneously integrated Si/SiGe quantum well bolometer focal plane arrays
2011 (English)In: Infrared Technology and Applications XXXVII: Proc. of SPIE, Vol. 8012, SPIE - International Society for Optical Engineering, 2011, 801216-1-801216-9 p.Conference paper (Refereed)
Most of today's commercial solutions for un-cooled IR imaging sensors are based on resistive bolometers using either Vanadium oxide (VOx) or amorphous Silicon (a-Si) as the thermistor material. Despite the long history for both concepts, market penetration outside high-end applications is still limited. By allowing actors in adjacent fields, such as those from the MEMS industry, to enter the market, this situation could change. This requires, however, that technologies fitting their tools and processes are developed. Heterogeneous integration of Si/SiGe quantum well bolometers on standard CMOS read out circuits is one approach that could easily be adopted by the MEMS industry. Due to its mono crystalline nature, the Si/SiGe thermistor material has excellent noise properties that result in a state-ofthe- art signal-to-noise ratio. The material is also stable at temperatures well above 450°C which offers great flexibility for both sensor integration and novel vacuum packaging concepts. We have previously reported on heterogeneous integration of Si/SiGe quantum well bolometers with pitches of 40μm x 40μm and 25μm x 25μm. The technology scales well to smaller pixel pitches and in this paper, we will report on our work on developing heterogeneous integration for Si/SiGe QW bolometers with a pixel pitch of 17μm x 17μm.
Place, publisher, year, edition, pages
SPIE - International Society for Optical Engineering, 2011. 801216-1-801216-9 p.
bolometers, heterogeneous integration, SiGe, quantum wells, focal plane arrays, uncooled IR
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-48623DOI: 10.1117/12.883827ISI: 000294735100041ScopusID: 2-s2.0-80053031139OAI: oai:DiVA.org:kth-48623DiVA: diva2:458224
SPIE Defense, Security, and Sensing 2011. Orlando, Florida, USA. 25 - 29 April 2011
QC 201201102012-01-102011-11-222012-01-10Bibliographically approved