Room temperature spin filtering effect in GaNAs: Role of hydrogen
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 99, no 15, 152109- p.Article in journal (Refereed) Published
Effects of hydrogen on the recently discovered defect-engineered spin filtering in GaNAs are investigated by optical spin orientation and optically detected magnetic resonance. Post-growth hydrogen treatments are shown to lead to nearly complete quenching of the room-temperature spin-filtering effect in both GaNAs epilayers and GaNAs/GaAs multiple quantum wells, accompanied by a reduction in concentrations of Ga(i) interstitial defects. Our finding provides strong evidence for efficient hydrogen passivation of these spin-filtering defects, likely via formation of complexes between Gai defects and hydrogen, as being responsible for the Observed strong suppression of the spin-filtering effect after the hydrogen treatments.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2011. Vol. 99, no 15, 152109- p.
gallium arsenide, gallium compounds, hydrogen, III-V semiconductors, interstitials, magnetic resonance, passivation, quenching (thermal), semiconductor epitaxial layers, semiconductor quantum wells, wide band gap semiconductors
Engineering and Technology Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-72139DOI: 10.1063/1.3651761ISI: 000295883800045OAI: oai:DiVA.org:liu-72139DiVA: diva2:457507