Development of SiC-FET methanol sensor
2011 (English)In: Sensors and actuators. B, Chemical, ISSN 0925-4005, Vol. 160, no 1, 72-78 p.Article in journal (Refereed) Published
A silicon carbide based field effect transistor (SiC-FET) structure was used for methanol sensing. Due to the chemical stability and wide band gap of SiC, these sensors are suitable for applications over a wide temperature range. Two different catalytic metals, Pt and Ir, were tested as gate contacts for detection of methanol. The sensing properties of both Ir gate and Pt gate SiC-FET sensors were investigated in the concentration range 0.3–5% of methanol in air and in the temperature range 150–350 °C. It was observed that compared to the Ir gate sensor, the Pt gate sensor showed higher sensitivity, faster response and recovery to methanol vapour at comparatively lower temperature, with an optimum around 200 °C. Quantum-chemical calculations were used to investigate the MeOH adsorption and to rationalize the observed non-Langmuir behavior of the response functions. The methanol sensing mechanism of the SiC-FET is discussed.
Place, publisher, year, edition, pages
Amsterdam, Nederländerna: Elsevier B.V. , 2011. Vol. 160, no 1, 72-78 p.
SiC, FET sensor, Pt, Ir, Methanol, Gas sensor, Solid state sensor
Engineering and Technology Natural Sciences
IdentifiersURN: urn:nbn:se:liu:diva-72077DOI: 10.1016/j.snb.2011.07.015ISI: 000298768100011OAI: oai:DiVA.org:liu-72077DiVA: diva2:456789
funding agencies|Swedish Research Council| VR 348-2007-6837 VR 621-2008-3229 VR 621-2008-4859 |2011-11-152011-11-152015-03-09