A WAFER-LEVEL, HETEROGENEOUSLY INTEGRATED, HIGH FLOW SMA-SILICON GAS MICROVALVE
2011 (English)In: 16th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2011), NEW YORK, NY: IEEE conference proceedings, 2011, 1781-1784 p.Conference paper (Refereed)
This paper presents a novel gas microvalve design in which a flow control gate is opened by the pneumatic pressure and closed by a SMA actuator, allowing large flow control. The microvalves were fabricated using a novel wafer-level Au-Si eutectic bonding process for TiNi to silicon integration. The resulting microvalves demonstrate a record pneumatic performance per footprint area; a microvalve of only 1×3.3 mm2 footprint successfully controls 3000 sccm at a pressure drop of 130 kPa.
Place, publisher, year, edition, pages
NEW YORK, NY: IEEE conference proceedings, 2011. 1781-1784 p.
Microvalve, SMA, TiNi, eutectic bonding, heterogeneous integration, shape memory alloy, wafer bonding
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-47631DOI: 10.1109/TRANSDUCERS.2011.5969424ScopusID: 2-s2.0-80052127998OAI: oai:DiVA.org:kth-47631DiVA: diva2:455841
16th IEEE International Conference on Solid-State Sensors, Actuators and Microsystems (IEEE TRANSDUCERS 2011),Beijing, China, 5-9 Jun, 2011
QC 201111172011-11-112011-11-112015-10-26Bibliographically approved