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Fabrication of high aspect ratio through silicon vias (TSVs) by magnetic assembly of nickel wires
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0003-3452-6361
KTH, School of Electrical Engineering (EES), Microsystem Technology.
KTH, School of Electrical Engineering (EES), Microsystem Technology.ORCID iD: 0000-0002-0441-6893
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2011 (English)In: Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on, IEEE , 2011, 37-40 p.Conference paper (Refereed)
Abstract [en]

Three-dimensional (3D) integration of electronics and/or MEMS-based transducers is an emerging technology that vertically interconnects stacked dies using through silicon vias (TSVs). They enable the realization of devices with shorter signal lengths, smaller packages and lower parasitic capacitances, which can result in higher performance and lower costs of the system. This paper presents a novel low-cost fabrication technique for solid metal-filled TSVs using nickel wires as conductive path. The wires are placed in the via hole of a silicon wafer by magnetic self-assembly. This metal filling technique enables through-wafer vias with high aspect ratios and potentially eliminates characteristic cost drivers of the TSV production such as metallization processes, wafer thinning and general issues associated with thin-wafer handling.

Place, publisher, year, edition, pages
IEEE , 2011. 37-40 p.
, Proceedings: IEEE micro electro mechanical systems, ISSN 1084-6999
Keyword [en]
3D integration;Ni;Si;conductive path;electronics and-or MEMS-based transducer;high aspect ratio through silicon via fabrication;low-cost fabrication technique;lower parasitic capacitance;magnetic self-assembly;metal filling technique;metallization process;nickel wire;shorter signal length;solid metal-filled TSV;thin-wafer handling;three-dimensional integration;through-wafer via;vertically interconnect stacked die;electronics packaging;integrated circuit interconnections;integrated circuit metallisation;microfabrication;micromechanical devices;nickel;silicon;three-dimensional integrated circuits;wires;
National Category
Engineering and Technology
URN: urn:nbn:se:kth:diva-47427DOI: 10.1109/MEMSYS.2011.5734356ISI: 000295841200010ScopusID: 2-s2.0-79953801879ISBN: 978-1-4244-9632-7OAI: diva2:455236
© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. QC 20111110Available from: 2011-11-10 Created: 2011-11-09 Last updated: 2011-11-15Bibliographically approved

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Fischer, Andreas C.Roxhed, NiclasHaraldsson, TommyStemme, GöranNiklaus, Frank
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