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Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
Chinese Academy of Sciences.
Chinese Academy of Sciences.
Chinese Academy of Sciences.
Chinese Academy of Sciences.
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 99, no 11, 113514-113514-3 p.Article in journal (Refereed) Published
Abstract [en]

Photocurrents (PCs) of three p–i–n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions.

Place, publisher, year, edition, pages
New York, N.Y.: American Institute of Physics (AIP), 2011. Vol. 99, no 11, 113514-113514-3 p.
Keyword [en]
Efficiency, Photocurrent, Quantum dots, Solar cells, Well infrared photodetector
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:hh:diva-16457DOI: 10.1063/1.3638488ISI: 000295034400089Scopus ID: 2-s2.0-80053190661OAI: oai:DiVA.org:hh-16457DiVA: diva2:448310
Available from: 2011-10-15 Created: 2011-10-15 Last updated: 2017-12-08Bibliographically approved

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