Phase-stabilization and substrate effects on nucleation and growth of (Ti,V)(n+1)GeC(n) thin films
2011 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 110, no 5, 053516Article in journal (Refereed) Published
Phase-pure epitaxial thin films of (Ti,V)(2)GeC have been grown onto Al(2)O(3)(0001) substrates via magnetron sputtering. The c lattice parameter is determined to be 12.59 A, corresponding to a 50/50 Ti/V solid solution according to Vegards law, and the overall (Ti,V): Ge: C composition is 2:1:1 as determined by elastic recoil detection analysis. The minimum temperature for the growth of (Ti,V)(2)GeC is 700 degrees C, which is the same as for Ti(2)GeC but higher than that required for V(2)GeC (450 degrees C). Reduced Ge content yields films containing (Ti,V)(3)GeC(2) and (Ti,V)(4)GeC(3). These results show that the previously unknown phases V(3)GeC(2) and V(4)GeC(3) can be stabilized through alloying with Ti. For films grown on 4H-SiC(0001), (Ti,V)(3)GeC(2) was observed as the dominant phase, showing that the nucleation and growth of (Ti,V)(n+1)GeC(n) is affected by the choice of substrate; the proposed underlying physical mechanism is that differences in the local substrate temperature enhance surface diffusion and facilitate the growth of the higher-order phase (Ti,V)(3)GeC(2) compared to (Ti,V)(2)GeC.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2011. Vol. 110, no 5, 053516
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-71221DOI: 10.1063/1.3631087ISI: 000294968600055OAI: oai:DiVA.org:liu-71221DiVA: diva2:446346
The status of this article was previously Manuscript and the original title was (Ti, V)n+1GeCn thin films.2011-10-072011-10-072016-08-31