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Excitonic parameters of GaN studied by time-of-flight spectroscopy
RAS.
RAS.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 99, no 10, 101108- p.Article in journal (Refereed) Published
Abstract [en]

We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as optical spectra, shows that a homogeneous width of the order of 10 mu eV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2011. Vol. 99, no 10, 101108- p.
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Engineering and Technology
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URN: urn:nbn:se:liu:diva-71101DOI: 10.1063/1.3625431ISI: 000294739100008OAI: oai:DiVA.org:liu-71101DiVA: diva2:444812
Available from: 2011-09-30 Created: 2011-09-30 Last updated: 2017-12-08

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Pozina, GaliaBergman, PederMonemar, Bo
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