Quantitative (S)TEM analysis of intermediate band solar cell materials
In this thesis the strain properties of two InAs/GaAs quantum dot intermediate band solar cell materials have been explored. Both samples were thin films grown on a (100) GaAs substrate. The quantum dot material was InAs, and the bulk material was GaAs. One sample had AlAs-cap, while the other had GaAs-cap. Geometrical phase analysis was used to study the strain. A higher degree of strain was found in the AlAs-capped sample. Negative strain was observed in directly above and below the quantum dots in both samples. A stacking fault in a quantum dot in the AlAs-capped sample was found to relax all the strain.
Analysis of the chemical composition of the AlAs-capped sample was performed using HAADF-STEM and multislice analysis. This analysis found an average indium concentration inside the quantum dots of 25% +- 10%, with peaks up to 50%.
Place, publisher, year, edition, pages
Institutt for fysikk , 2011. , 82 p.
ntnudaim:6602, MTFYMA fysikk og matematikk, Teknisk fysikk
IdentifiersURN: urn:nbn:no:ntnu:diva-13655Local ID: ntnudaim:6602OAI: oai:DiVA.org:ntnu-13655DiVA: diva2:441355
Holmestad, Randi, ProfessorReenaas, TuridVullum, Per Erik