Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 84, no 7, 075324- p.Article in journal (Refereed) Published
The effect of Mg doping on stacking fault (SF) formation in c-plane GaN grown by metal-organic chemical-vapor deposition has been studied for Mg concentration between 2 x 10(18) cm(-3) and 5 x 10(19) cm(-3). Transmission electron microscopy studies demonstrate a direct correlation between the increasing Mg content and the number of small (3-10-nm long) SFs present. The energy dispersive x-ray analysis (EDX) line profile of a SF shows that the Mg-impurity atom resides at a distance approximately 5 nm from the SF. Cathodoluminescence (CL) mapping reveals that the Mg-doped regions radiate at energies corresponding to known SF emission peaks. SF-related peaks in CL spectra show metastability, which may be attributed to transfer processes involving Mg acceptors and nearby associated SFs.
Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 84, no 7, 075324- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-70330DOI: 10.1103/PhysRevB.84.075324ISI: 000293830600018OAI: oai:DiVA.org:liu-70330DiVA: diva2:438347
Funding Agencies|Swedish Energy Agency||Swedish Research Council (VR)||Swedish Governmental Agency for Innovation Systems (VINNOVA)||2011-09-022011-09-022016-08-31