Wire-bonded through-silicon vias with low capacitive substrate coupling
2011 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 21, no 8, 085035- p.Article in journal (Refereed) Published
Three-dimensional integration of electronics and/or MEMS-based transducers is an emerging technology that vertically interconnects stacked dies with through-silicon vias (TSVs). They enable the realization of circuits with shorter signal path lengths, smaller packages and lower parasitic capacitances, which results in higher performance and lower costs. This paper presents a novel technique for fabricating TSVs from bonded gold wires. The wires are embedded in a polymer, which acts both as an electrical insulator, resulting in low capacitive coupling toward the substrate and as a buffer for thermo-mechanical stress.
Place, publisher, year, edition, pages
IOP Science , 2011. Vol. 21, no 8, 085035- p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-37546DOI: 10.1088/0960-1317/21/8/085035ISI: 000293163700035ScopusID: 2-s2.0-79961219588OAI: oai:DiVA.org:kth-37546DiVA: diva2:434694
QC 201108162011-11-082011-08-152012-12-07Bibliographically approved