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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications
Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg.
Microwave Electronics Laboratory, Chalmers University of Technology, Gothenburg.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2011 (English)In: IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, Vol. 32, no 6, 788-790 p.Article in journal (Refereed) Published
Abstract [en]

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

Place, publisher, year, edition, pages
IEEE Institute of Electrical and Electronics , 2011. Vol. 32, no 6, 788-790 p.
Keyword [en]
Interdigitated, load modulation, power amplifiers (PAs), Schottky diodes, self-aligned, SiC, tuning range, varactors
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-68914DOI: 10.1109/LED.2011.2131117ISI: 000290994800030OAI: oai:DiVA.org:liu-68914DiVA: diva2:421953
Available from: 2011-06-10 Created: 2011-06-10 Last updated: 2014-10-08

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Henry, AnneAndersson, SvenJanzén, Erik
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