Deep levels in tungsten doped n-type 3C-SiC
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 15, 152104- p.Article in journal (Refereed) Published
Tungsten was incorporated in SiC and W related defects were investigated using deep level transient spectroscopy. In agreement with literature, two levels related to W were detected in 4H-SiC, whereas only the deeper level was observed in 6H-SiC. The predicted energy level for W in 3C-SiC was observed (E-C-0.47 eV). Tungsten serves as a common reference level in SiC. The detected intrinsic levels align as well: E1 (E-C-0.57 eV) in 3C-SiC is proposed to have the same origin, likely V-C, as EH6/7 in 4H-SiC and E7 in 6H-SiC, respectively.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 15, 152104- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67976DOI: 10.1063/1.3579527ISI: 000289580800030OAI: oai:DiVA.org:liu-67976DiVA: diva2:414722
Franziska Beyer, Carl Hemmingsson, Andreas Gällström, Stefano Leone, Henrik Pedersen, Anne Henry and Erik Janzén, Deep levels in tungsten doped n-type 3C-SiC, 2011, APPLIED PHYSICS LETTERS, (98), 15, 152104.
Copyright: American Institute of Physics