Change search
ReferencesLink to record
Permanent link

Direct link
Selective homoepitaxial growth and luminescent properties of ZnO nanopillars
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Aristotle University Thessaloniki.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)In: NANOTECHNOLOGY, ISSN 0957-4484, Vol. 22, no 18, 185603- p.Article in journal (Refereed) Published
Abstract [en]

High spatial density ZnO nanopillars (NPs) have been fabricated on catalyst-and pattern-free Si wafers using atmospheric pressure metal organic chemical vapor deposition (APMOCVD) at a moderate temperature (500 degrees C). The nanopillar diameter is similar to 35 nm and the length is similar to 150 nm, with a density of similar to 2 x 10(9) cm(-2). The growth evolution of the nanopillars, providing the (0001)(NP) parallel to (0001)(ZnO) (grain) parallel to (100)(Si) (surface) epitaxial relationship, is extensively studied by scanning and high resolution transmission microscopy. The approach to obtaining the ZnO 1D structures is explained in terms of selective homoepitaxial growth via the crystallographic anisotropy of the seeding layer. The advanced PL properties of ZnO NPs, e. g. indications of free excitonic and absence of defect emission, are related to their single crystalline nature within one pillar and most probably better stoichiometry and less contamination. The observed efficient monochromatic UV emission from the ZnO NPs at room temperature points toward their potential application as building blocks for nanoscale optoelectronic devices.

Place, publisher, year, edition, pages
Institute of Physics; 1999 , 2011. Vol. 22, no 18, 185603- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-67300DOI: 10.1088/0957-4484/22/18/185603ISI: 000288653300019OAI: oai:DiVA.org:liu-67300DiVA: diva2:409401
Available from: 2011-04-08 Created: 2011-04-08 Last updated: 2016-08-31

Open Access in DiVA

fulltext(2285 kB)155 downloads
File information
File name FULLTEXT01.pdfFile size 2285 kBChecksum SHA-512
5801dd6d11107d9d11d9954e72f66c4f55fbd2a89a6edf3da92d9fea99be12fbff84283ae4517a8bdcc88e9f47f7332e4458981e53851fdb146c6ae0b2957912
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Search in DiVA

By author/editor
Khranovskyy, VolodymyrHultman, LarsYakimova, Rositsa
By organisation
Semiconductor MaterialsThe Institute of TechnologyThin Film Physics
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 155 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 197 hits
ReferencesLink to record
Permanent link

Direct link