Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC
2010 (English)In: Journal of Nanomaterials, Vol. 2010, no 817201Article in journal (Refereed) Published
High-quality ZnO rods were grown by the vapour-liquid-solid (VLS) technique on 4H-p-SiC substrate. The current transport mechanisms of the diodes at room temperature (RT) have been explained in term of the space-charge-limited current model based on the energy band diagram of ZnO rods/4H-p-SiC heterostructure. The tunneling mechanism via deep-level states was found to be the main conduction process at low-applied voltage but at trap-filled limit voltage VTFL all traps are filled and the space-charge-limited current conduction dominated the current transport. From the RT current voltage measurements, the energy of the deep level trap and the trap concentration were obtained as ∼0.24±0.02 eV and 4.4×1018cm−3, respectively. The deep level states observed correspond to zinc interstitial (Zni ), responsible for the violet emission.
Place, publisher, year, edition, pages
Hindawi , 2010. Vol. 2010, no 817201
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67326DOI: 10.1155/2010/817201OAI: oai:DiVA.org:liu-67326DiVA: diva2:409349
Nargis Bano, I. Hussain, Omer Nur, Magnus Willander and P. Klason, Study of Radiative Defects Using Current-Voltage Characteristics in ZnO Rods Catalytically Grown on 4H-p-SiC, 2010, Journal of Nanomaterials, (2010), 817201.
Licensee: Hindawi Publishing Corporation