Exciton-phonon coupling in single quantum dots with different barriers
2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 25, 251911- p.Article in journal (Refereed) Published
The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the quantum dots with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 25, 251911- p.
aluminium compounds; gallium arsenide; III-V semiconductors; indium compounds; phonon-exciton interactions; semiconductor quantum dots
IdentifiersURN: urn:nbn:se:liu:diva-67198DOI: 10.1063/1.3600781ISI: 000292039900027OAI: oai:DiVA.org:liu-67198DiVA: diva2:408225
Daniel Dufåker, L. O. Mereni, Fredrik K. Karlsson, V. Dimastrodonato, G. Juska, Per-Olof Holtz and E. Pelucchi, Exciton-phonon coupling in single quantum dots with different barriers, 2011, Applied Physics Letters, (98), 25, 251911.
Copyright: American Institute of Physics