Shallow donor and DX states of Si in AlN
2011 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 98, no 9, 092104- p.Article in journal (Refereed) Published
In unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g=1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX- state lying at similar to 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.
Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 9, 092104- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-67039DOI: 10.1063/1.3559914ISI: 000288026700032OAI: oai:DiVA.org:liu-67039DiVA: diva2:406273
Nguyen Son Tien, M Bickermann and Erik Janzén, Shallow donor and DX states of Si in AlN, 2011, APPLIED PHYSICS LETTERS, (98), 9, 092104.
Copyright: American Institute of Physics