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Shallow donor and DX states of Si in AlN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University Erlangen Nurnberg.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)In: APPLIED PHYSICS LETTERS, ISSN 0003-6951, Vol. 98, no 9, 092104- p.Article in journal (Refereed) Published
Abstract [en]

In unintentionally Si-doped AlN, the electron paramagnetic resonance (EPR) spectrum of the Si shallow donor (g=1.9905) was observed in darkness at room temperature. The temperature dependence of the EPR signal suggests that Si in AlN is a DX center with the DX- state lying at similar to 78 meV below the neutral shallow donor state. With such relatively small thermal activation energy, Si is expected to behave as a shallow dopant in AlN at normal device operating temperatures.

Place, publisher, year, edition, pages
American Institute of Physics , 2011. Vol. 98, no 9, 092104- p.
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Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-67039DOI: 10.1063/1.3559914ISI: 000288026700032OAI: oai:DiVA.org:liu-67039DiVA: diva2:406273
Note
Original Publication: Nguyen Son Tien, M Bickermann and Erik Janzén, Shallow donor and DX states of Si in AlN, 2011, APPLIED PHYSICS LETTERS, (98), 9, 092104. http://dx.doi.org/10.1063/1.3559914 Copyright: American Institute of Physics http://www.aip.org/Available from: 2011-03-25 Created: 2011-03-25 Last updated: 2011-03-30

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