The integration of modern electronic devices for information processing is rapidly ap-proaching an interconnect bottleneck. Silicon photonics can be a promising solution forcircumventing this bottleneck, as already being anticipated by many electronics manu-facturers including HP, IBM and Intel. In particular, optical interconnects can expeditedata transfer both between and within microchips. This thesis aims at two basic buildingblocks of silicon photonics: waveguides and resonators and addresses their applications inoptical signal processing and their potential integration with plasmonic devices.
Firstly, the basic theories of waveguide and resonator are introduced. For a singleresonator which acts as a basic signal processing unit, the transmission, phase shift andgroup delay exhibit unique characteristics. Mode splitting is observed in both a singleresonator and a coupled-resonator system. By tuning the conﬁguration of the coupled-resonator system, one can obtain diﬀerent transmission characteristics for more advancedsignal processing.
Secondly, the fabrication and characterization of silicon waveguides and resonatorsused in the thesis are introduced. The fabrication is carried out with e-beam lithographyfollowed by inductively coupled plasma etching. A vertical grating coupling method isadopted to characterize the transmission spectrum.
Thirdly, based on a single-ring resonator, three kinds of signal processing are ex-perimentally demonstrated: (1) 10 Gb/s format conversion from non-return-to-zero toalternate-mark-inversion signal; (2) a microwave photonic phase shifter providing a tun-able phase shift of 0–4.6 rad for a 20 GHz signal; (3) a delay line providing maximaldelay times of 80 ps, 95 ps, 110 ps and 65 ps, respectively, for signals in return-to-zero,carrier-suppressed return-to-zero, return-to-zero duobinary, and return-to-zero alternate-mark-inversion formats.
Fourthly, based on a single-ring resonator with mode-splitting, two kinds of signalprocessing are experimentally demonstrated: (1) a dense wavelength conversion using thefree carrier dispersion eﬀect with a data rate ranging from 500 Mb/s to 5 Gb/s; (2) amaximum pulse advancement of 130 ps for a 1 ns signal pulse.
Since silicon photonic devices are limited by diﬀraction limit, we further look intotheir hybridization with the diﬀraction-limit-free plasmonic devices. Two directional cou-plers from a Si photonic waveguide to a hybrid Si-metal plasmonic waveguide and to ametal-insulator-metal plasmonic waveguide are investigated. The proposed hybrid cou-plers feature a short coupling length, a high coupling eﬃciency, a high extinction ratioand a low insertion loss.
Stockholm: KTH Royal Institute of Technology , 2011. , xv, 75 p.
2011-04-07, Sal / Hall C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (English)