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Growth of GaN nanotubes by halide vapor phase epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2011 (English)In: NANOTECHNOLOGY, ISSN 0957-4484, Vol. 22, no 8, 085602- p.Article in journal (Refereed) Published
Abstract [en]

We have investigated low temperature growth of GaN nanostructures using halide vapor phase epitaxy on c-oriented Al2O3 and Au coated Al2O3 substrates. Depending on the III/V ratio and the growth temperature, the shape and density of the structures could be controlled. By increasing the GaCl partial pressure, the structure changed from dot-like to nanotubes. The nanotubes, which could be open or closed, were about 1 mu m long with a diameter of typically 200 nm. In addition, it was observed that the nanostructures were spontaneously nucleated at droplets of Ga or, when using Au coated Al2O3, on droplets of Au/Ga alloy. By varying the growth temperature, the inner diameter of the nanotubes could be controlled. The experimental results suggest that this approach with pre-patterned Au coated Al(2)O(3)substrates has the potential for fabrication of well-organized nanotubes with a high density.

Place, publisher, year, edition, pages
Institute of Physics; 1999 , 2011. Vol. 22, no 8, 085602- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-66282DOI: 10.1088/0957-4484/22/8/085602ISI: 000286317500011OAI: oai:DiVA.org:liu-66282DiVA: diva2:403181
Note
Original Publication: Carl Hemmingsson, Galia Pozina, Sergey Khromov and Bo Monemar, Growth of GaN nanotubes by halide vapor phase epitaxy, 2011, NANOTECHNOLOGY, (22), 8, 085602. http://dx.doi.org/10.1088/0957-4484/22/8/085602 Copyright: Institute of Physics; 1999 http://www.iop.org/ Available from: 2011-03-11 Created: 2011-03-11 Last updated: 2015-09-22

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Hemmingsson, CarlPozina, GaliaKhromov, SergeyMonemar, Bo
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