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Model of MOSFET in Delphi
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE).
Halmstad University, School of Information Science, Computer and Electrical Engineering (IDE).
2011 (English)Independent thesis Advanced level (degree of Master (One Year)), 15 credits / 22,5 HE creditsStudent thesis
Abstract [en]

In modern times the increasing complexity of transistors and their constant decreasingsize require more effective techniques to display and interpret the processes that are inside of devices.

In this work, we are modeling a two‐dimensional n‐MOSFET with a long channeland uniformly doped substrate. We assume that this device is a large geometry device so that short‐channel and narrow‐width effects can be neglected.

As a result of the thesis, a demonstration program was built. In this executable file, the user can choose parameters of the MOSFET‐model: drain and gate voltage, and different geometrical parameters of the device (junction depth and effective channel length). In the advanced regime of the program, the user can also specify the model re‐calculation parameter, doping concentration in n+ and bulk regions. The program shows the channel between the source and drain region with surface diagrams of carrier density and potential energy as an output. It is possible to save all calculated results to a file and process it in any other program, for example, plot graphics in Matlab or Matematica.

The model can be used in lectures that are related to semiconductor physics in order to explain the basic working mechanisms of MOSFETs as well as for further detailed analysis of the processes in MOSFETs. It is possible to use our modeling techniques to rebuild the model in another computer language, or even to build other models of transistors, performing similar calculations and approximations.

It is possible to download the executable file of the model here:

Place, publisher, year, edition, pages
2011. , 34 p.
, Technical report, ISSN IDE1066, January 2011
Keyword [en]
MOSFET, semiconductor, model, Delphi, channel, carrier concentration, potential energy
URN: urn:nbn:se:hh:diva-14209Local ID: IDE1066OAI: diva2:391998
Physics, Chemistry, Mathematics
Available from: 2011-02-28 Created: 2011-01-25 Last updated: 2011-02-28Bibliographically approved

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Prokhorov, AndreyGerzheva, Olesya
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