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Theoretical study of dilute magnetic semiconductors: Properties of (Ga,Mn)As
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy.
2010 (English)Independent thesis Basic level (degree of Bachelor), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

The dilute magnetic semiconductor (Ga,Mn)As , which is the most interesting and promising material for spintronics applications, has been theoretically studied by using Density Functional Theory. First of all, calculations on GaAs were done and it was found that GaAs is a semiconductor with a direct band gap. The calculated value of the band gap is ~ 0.5eV. Secondly, the material iron was considered and it was confirmed that iron is a ferromagnetic metal with 2.2µB net magnetic moment. Then a magnetic impurity of manganese, Mn was introduced in the nonmagnetic GaAs and it became ferromagnetic with a net magnetic moment of 4µB. The origin of the ferromagnetic behaviour is discussed and also the Curie temperature TC of the material. It appeared that (Ga,Mn)As is a suitable material for DMS but TC has to be increased before (Ga,Mn)As could be used for spintronics applications and on that account some methods of increasing TC are considered at the end.

Abstract [sv]

Den magnetiska halvledaren (Ga,Mn)As som är det mest intressanta och lovande materialet för spinelektroniska tillämpningar har teoretiskt undersökts med hjälp av Täthetsfunktionalteorin. Först gjordes beräkningar på GaAs och det visade sig att GaAs är en halvledare med direkt bandgap. Det beräknade värdet på bandgapet är ca 0.5eV. Sedan var det järn som undersöktes och det blev bekräftat att järn är en ferromagnetisk metall med netto magnetisk moment lika med 2.2μB. Då magnetiska störningar i form av mangan atomer, Mn, infördes i det omagnetiska GaAs blev halvledaren ferromagnetisk med netto magnetisk moment lika med 4μB. Orsakerna till den ferromagnetiska ordningen diskuteras och även Curie temperaturen TC för materialet. Det visade sig att (Ga,Mn)As är ett lämpligt material för tillverkning av magnetiska halvledare men TC måste ökas innan (Ga,Mn)As skulle kunna användas i spinntroniska tillämpningar och av det skälet anges i slutet vissa metoder för att öka TC.

Place, publisher, year, edition, pages
2010. , 19 p.
Series
FYSAST
Keyword [en]
semiconductor, DMS, spintronics, electronic band structure
Keyword [sv]
magnetiska halvledare, spinntronik
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-126096OAI: oai:DiVA.org:uu-126096DiVA: diva2:321881
Educational program
Bachelor Programme in Physics
Presentation
(English)
Uppsok
Physics, Chemistry, Mathematics
Supervisors
Examiners
Available from: 2011-07-06 Created: 2010-06-02 Last updated: 2011-07-06Bibliographically approved

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CiteExportLink to record
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